Ultrafast nanoprobing

Nanoprobing SEM Solution for In Situ Semiconductor Failure Analysis

The number of microelectronic devices integrated in modern cars has dramatically increased in the past years, yet the reliability has to remain excellent. This is a major challenge for the automotive industry. Semiconductor failure analysis methods have therefore to continuously improve in order to withstand it. In fact, conventional failure analyses techniques such as emission microscopy (EMMI...

Nanoprobing SRAM Bit Cells with High-Speed Pulses

For a number of years, in-die SRAM transistors have been successfully probed using direct current (dc) nanoprobing to reveal faults for failure analysis and to verify in-die parametric performance for the engineering design loop.[1-5] These slow dc tests are needed for measuring subnanoampere gate and channel leakages. There has recently been interest in exploring the value of high-speed testin...

Advance static random access memory soft fail analysis using nanoprobing and junction delineation transmission electron microscopy

Ultrafast Experiment.docx

The measurement of short time intervals during the first half of 20 century was limited to intervals longer than one nanosecond. The advent of lasers in 1960 revolutionized the field of time-resolved spectroscopy. The time interval is shortened from 10 to 10 seconds, which made ultrafast experiment grows rapidly. New subfields of science, including femtochemistry and femtobiology, have been cre...

Electrical nanoprobing of semiconducting carbon nanotubes using an atomic force microscope.

We use an atomic force microscope (AFM) tip to locally probe the electronic properties of semiconducting carbon nanotube transistors. A gold-coated AFM tip serves as a voltage or current probe in three-probe measurement setup. Using the tip as a movable current probe, we investigate the scaling of the device properties with channel length. Using the tip as a voltage probe, we study the properti...